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Making Room for Growing Oriented FASnI 3 with Large Grains via Cold Precursor Solution
Author(s) -
Cui Danyu,
Liu Xiao,
Wu Tianhao,
Lin Xuesong,
Luo Xinhui,
Wu Yongzhen,
Segawa Hiroshi,
Yang Xudong,
Zhang Yiqiang,
Wang Yanbo,
Han Liyuan
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202100931
Subject(s) - materials science , crystallization , nucleation , tin , perovskite (structure) , energy conversion efficiency , halide , chemical engineering , band gap , crystal growth , open circuit voltage , solution process , nanotechnology , crystal (programming language) , optoelectronics , voltage , inorganic chemistry , crystallography , electrical engineering , computer science , thermodynamics , metallurgy , programming language , chemistry , physics , engineering
Tin halide perovskites are promising candidates for preparing efficient lead‐free perovskite solar cells due to their ideal band gap and high charge‐carrier mobility. However, the notorious rapid crystallization process results in the inferior power conversion efficiency (PCE) of tin perovskite solar cells (TPSCs). Here, a facile method is employed to manage this crystallization process by using cold precursor solution that raises the critical Gibbs free energy to slow down the nucleation rate, sparing both space and time for crystal growth. In this way, highly oriented FASnI 3 films with micrometer‐scale grains are fabricated and an increase of 70 mV in the open‐circuit voltage is obtained for TPSCs. This method is compatible with other existed strategies such as additive engineering or the post‐treatment method. The best‐performing device that combines 0 °C precursor solution and post‐treatment method demonstrates a PCE of 12.11%.