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Inkjet Printing Epitaxial Metal Halide Perovskites on Various Substrates?
Author(s) -
Lu Chaojing,
Sun Shiduo,
Duo Yiwei
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202100694
Subject(s) - epitaxy , materials science , halide , scanning electron microscope , texture (cosmology) , diffraction , perovskite (structure) , metal , substrate (aquarium) , impurity , optoelectronics , crystallography , nanotechnology , optics , inorganic chemistry , composite material , metallurgy , chemistry , layer (electronics) , computer science , artificial intelligence , organic chemistry , image (mathematics) , physics , oceanography , geology
In their Progress Report, Sytnyk et al. claimed the epitaxial deposition of metal halide perovskites by inkjet printing on various substrates. The claims of epitaxy are doubtful due to a lack of convincing experimental evidence. Both optical microscopy and scanning electron microscopy images alone are insufficient to prove epitaxy. Even if the images suggest that epitaxial growth might have been achieved, direct evidences from X‐ray diffraction (XRD) or electron diffraction are still needed. Among the six perovskite‐substrate systems, only two CH 3 NH 3 PbI 3 deposits on (111)PbTe/BaF 2 are characterized with XRD. According to their XRD patterns, actually, it is estimated that each of their MAPbI 3 deposits contains only <20% epitaxial components and the component of nearly random orientation is predominant besides considerable impurity PbI 2 . None of the MAPbI 3 deposits can be considered epitaxial. It is critical to point out the errors in the methodology for verifying epitaxy, so that researchers would not be misled by Sytnyk's paper. Importantly, a new methodology to quantify the volume fraction of each epitaxial component in a thin film from XRD measurements is proposed. It is reliable to estimate the degree of texture according to the proposed equations, quite different from using Lotgering degree of orientation.