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Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS 2 Transistor
Author(s) -
Lee Kookjin,
Choi Junhee,
Kaczer Ben,
Grill Alexander,
Lee Jae Woo,
Van Beek Simon,
Bury Erik,
DiazFortuny Javier,
Chasin Adrian,
Lee Jaewoo,
Chun Jungu,
Shin Dong Hoon,
Na Junhong,
Cho Hyeran,
Lee Sang Wook,
Kim GyuTae
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202100625
Subject(s) - materials science , transistor , threshold voltage , dielectric , optoelectronics , subthreshold conduction , subthreshold swing , field effect transistor , high κ dielectric , noise (video) , voltage , boron nitride , nanotechnology , electrical engineering , computer science , image (mathematics) , engineering , artificial intelligence
In this study, high‐performance few‐layered ReS 2 field‐effect transistors (FETs), fabricated with hexagonal boron nitride (h‐BN) as top/bottom dual gate dielectrics, are presented. The performance of h‐BN dual gated ReS 2 FET having a trade‐off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h‐BN dielectric has almost no defects and provides a physical distance between the traps in the SiO 2 and the carriers in the ReS 2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h‐BN dual‐gated ReS 2 with a high mobility of 46.1 cm 2 V −1 s −1 , a high current on/off ratio of ≈10 6 , a subthreshold swing of 2.7 V dec −1 , and a low effective interface trap density ( N t,eff ) of 7.85 × 10 10 cm −2 eV −1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time‐dependent current, and low‐frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS 2 channel through Y‐function method as a function of constant top gate bias.