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Wide Bandgap Sb 2 S 3 Solar Cells
Author(s) -
Shah Usman Ali,
Chen Shiwu,
Khalaf Gomaa Mohamed Gomaa,
Jin Zhixin,
Song Haisheng
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202100265
Subject(s) - tandem , materials science , band gap , optoelectronics , solar cell , plasmonic solar cell , energy conversion efficiency , hybrid solar cell , silicon , engineering physics , nanotechnology , polymer solar cell , physics , composite material
The wide bandgap Sb 2 S 3 is considered to be one of the most promising absorber layers in single‐junction solar cells and a suitable top‐cell candidate for multi‐junction (tandem) solar cells. However, compared to mature thin‐film technologies, Sb 2 S 3 based thin‐film solar cells are still lagging behind in the power conversion efficiency race, and the highest of just 7.5% has been achieved to date in a sensitized single‐junction structure. Furthermore, to break single junction solar cell based Shockley–Queisser (S–Q) limits, tandem devices with wide bandgap top‐cells and low bandgap bottom‐cells hold a high potential for efficient light conversion. Though matured and desirable bottom‐cell candidates like silicon (Si) are available, the corresponding mature wide bandgap top‐cell candidates are still lacking. Hence, a literature review based on Sb 2 S 3 solar cells is urgently warranted. In this review, the progress and present status of Sb 2 S 3 solar cells are summarized. An emphasis is placed mainly on the improvement of absorber quality and device performance. Moreover, the low‐performance causes and possible overcoming mechanisms are also explained. Last but not least, the potential and feasibility of Sb 2 S 3 in tandem devices are vividly discussed. In the end, several strategies and perspectives for future research are outlined.