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Nitride MXenes: Basal Plane Hydrogen Evolution Activity from Mixed Metal Nitride MXenes Measured by Scanning Electrochemical Microscopy (Adv. Funct. Mater. 47/2020)
Author(s) -
Djire Abdoulaye,
Wang Xiang,
Xiao Chuanxiao,
Nwamba O. Charles,
Mirkin Michael V.,
Neale Nathan R.
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202070313
Subject(s) - mxenes , materials science , scanning electrochemical microscopy , electrochemistry , nitride , basal plane , metal , piezoresponse force microscopy , nanotechnology , chemical engineering , crystallography , metallurgy , layer (electronics) , optoelectronics , electrode , chemistry , engineering , dielectric , ferroelectricity
In article number 2001136, Michael V. Mirkin, Nathan R. Neale, and co‐workers modulate hydrogen evolution reaction (HER) activity by adding transition metal ions M to a titanium nitride MXene to yield M‐Ti 4 N 3 T x (M = V, Cr, Mo, or Mn). The M‐Ti 4 N 3 T x MXenes exhibit highly tunable metal‐dependent HER activity from the basal planes as well as semiconducting behavior measured using scanning electrochemical microscopy and electrochemical techniques. Artwork credit: Al Hicks (NREL).