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Silicon Photonics: Orientation‐Controlled Selective‐Area Epitaxy of III–V Nanowires on (001) Silicon for Silicon Photonics (Adv. Funct. Mater. 30/2020)
Author(s) -
Chang TingYuan,
Kim Hyunseok,
Zutter Brian T.,
Lee WookJae,
Regan Brian C.,
Huffaker Diana L.
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202070203
Subject(s) - materials science , photonics , silicon , silicon photonics , nanophotonics , nanowire , optoelectronics , photonic crystal , nanotechnology , silicon nanowires , orientation (vector space) , hybrid silicon laser , geometry , mathematics
In article number 2002220, Hyunseok Kim and co‐workers demonstrate a method to monolithically integrate III–V nanowires on silicon (001) platforms with the ability to control the position and orientation. The nanowire‐based ultracompact photonic crystal cavities are integrated on standard silicon photonic platforms with waveguides, which provides new opportunities in combining functional III–V devices with mature silicon platforms for future nanophotonics and electronics.