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p‐Doping Methods: Molecule Charge Transfer Doping for p‐Channel Solution‐Processed Copper Oxide Transistors (Adv. Funct. Mater. 24/2020)
Author(s) -
Liu Ao,
Zhu Huihui,
Noh YongYoung
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202070151
Subject(s) - materials science , doping , thin film transistor , optoelectronics , oxide , transistor , realization (probability) , copper , charge (physics) , copper oxide , inverter , channel (broadcasting) , molecule , nanotechnology , electrical engineering , voltage , layer (electronics) , metallurgy , organic chemistry , physics , engineering , quantum mechanics , chemistry , statistics , mathematics
In article number 2002625, Yong‐Young Noh, Ao Liu, and Huihui Zhu demonstrate molecule charge transfer p‐doping for p‐channel copper oxide (Cu x O) thin‐film transistors (TFTs) with a dramatically improved hole mobility of over 20‐fold without sacrificing other opto‐/electrical parameters. The high doping efficiency and high‐performance complementary inverter provide new opportunities for high‐performance p‐channel TFTs and circuit realization.