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Field Effect Transistors: Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects (Adv. Funct. Mater. 18/2020)
Author(s) -
Jing Xu,
Illarionov Yury,
Yalon Eilam,
Zhou Peng,
Grasser Tibor,
Shi Yuanyuan,
Lanza Mario
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202070116
Subject(s) - materials science , transistor , field effect transistor , semiconductor , scalability , fabrication , nanotechnology , engineering physics , field (mathematics) , optoelectronics , electrical engineering , computer science , engineering , medicine , alternative medicine , pathology , voltage , database , mathematics , pure mathematics
In article number 1901971, Mario Lanza and co‐workers review the main challenges and potential solutions towards the fabrication of field effect transistors with 2D semiconducting channels. The scalability and compatibility of these materials with the requirements imposed by the semiconductor industry are discussed, and some recommendations are proposed.