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Photodetectors: Ultrahigh Stability 3D TI Bi 2 Se 3 /MoO 3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband (Adv. Funct. Mater. 12/2020)
Author(s) -
Yang Ming,
Han Qi,
Liu Xianchao,
Han Jiayue,
Zhao Yafei,
He Liang,
Gou Jun,
Wu Zhiming,
Wang Xinran,
Wang Jun
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202070078
Subject(s) - photodetector , materials science , optoelectronics , heterojunction , thin film , infrared , specific detectivity , ultrashort pulse , annealing (glass) , broadband , topological insulator , detector , responsivity , optics , nanotechnology , laser , composite material , physics , quantum mechanics
In article number 1909659, Liang He, Jun Wang, and co‐workers prepare a high‐performance thin film heterojunction photodetector, which is the combination of a 3D topological insulator (Bi 2 Se 3 ) and MoO 3 . The results demonstrate that heat annealing can significantly improve the properties of the device. This detector has broadband detection capabilities, with an ultrafast response time and application‐level detectivity.