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Transition Metal Dichalcogenides: Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays (Adv. Funct. Mater. 11/2020)
Author(s) -
Chee SangSoo,
Lee WonJune,
Jo YongRyun,
Cho Min Kyung,
Chun DongWon,
Baik Hionsuck,
Kim BongJoong,
Yoon MyungHan,
Lee Kayoung,
Ham MoonHo
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202070073
Subject(s) - molybdenum disulfide , monolayer , materials science , transition metal , molybdenum , vacancy defect , chemical vapor deposition , sulfur , transmission electron microscopy , nanotechnology , optoelectronics , crystallography , catalysis , metallurgy , chemistry , organic chemistry
In article number 1908147, Myung‐Han Yoon, Kayoung Lee, Moon‐Ho Ham, and co‐workers present the atomic vacancy control and elemental substitution in a chemical vapor deposition‐grown molybdenum disulfide (MoS 2 ) monolayer via mild photon irradiation. The atomic‐resolution scanning transmission electron microscopy directly confirms that sulfur vacancies and oxygen substituents are generated in the MoS 2 monolayer, and its device shows outstanding optoelectronic performances.