Transition Metal Dichalcogenides: Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays (Adv. Funct. Mater. 11/2020) | Zendy

Chee SangSoo | Zendy; Lee WonJune | Zendy; Jo YongRyun | Zendy; Cho Min Kyung | Zendy; Chun DongWon | Zendy; Baik Hionsuck | Zendy; Kim BongJoong | Zendy; Yoon MyungHan | Zendy; Lee Kayoung | Zendy; Ham MoonHo | Zendy

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Transition Metal Dichalcogenides: Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays (Adv. Funct. Mater. 11/2020)

Author(s) -

Chee SangSoo,

Lee WonJune,

Jo YongRyun,

Cho Min Kyung,

Chun DongWon,

Baik Hionsuck,

Kim BongJoong,

Yoon MyungHan,

Lee Kayoung,

Ham MoonHo

Publication year - 2020

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.202070073

Subject(s) - molybdenum disulfide , monolayer , materials science , transition metal , molybdenum , vacancy defect , chemical vapor deposition , sulfur , transmission electron microscopy , nanotechnology , optoelectronics , crystallography , catalysis , metallurgy , chemistry , organic chemistry

In article number 1908147, Myung‐Han Yoon, Kayoung Lee, Moon‐Ho Ham, and co‐workers present the atomic vacancy control and elemental substitution in a chemical vapor deposition‐grown molybdenum disulfide (MoS 2 ) monolayer via mild photon irradiation. The atomic‐resolution scanning transmission electron microscopy directly confirms that sulfur vacancies and oxygen substituents are generated in the MoS 2 monolayer, and its device shows outstanding optoelectronic performances.

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