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Noble Metal Dichalcogenides: A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors (Adv. Funct. Mater. 5/2020)
Author(s) -
Wang Zhen,
Wang Peng,
Wang Fang,
Ye Jiafu,
He Ting,
Wu Feng,
Peng Meng,
Wu Peisong,
Chen Yunfeng,
Zhong Fang,
Xie Runzhang,
Cui Zhuangzhuang,
Shen Liang,
Zhang Qinghua,
Gu Lin,
Luo Man,
Wang Yang,
Chen Huawei,
Zhou Peng,
Pan Anlian,
Zhou Xiaohao,
Zhang Lili,
Hu Weida
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202070027
Subject(s) - materials science , noble metal , photodetector , optoelectronics , nanotechnology , broadband , band gap , metal , telecommunications , computer science , metallurgy
In article number 1907945, Fang Wang, Qinghua Zhang, Xiaohao Zhou, Weida Hu, and co‐workers show that 2D materials exhibit excellent properties, such as atomic thinness, tunable bandgap, and high carrier mobility. The family of 2D materials is ceaselessly diversified and enriched, especially for the recently investigated noble metal dichalcogenides. Narrow bandgap noble metal dichalcogenides with good stability have become promising candidates for fabricating high performance electronic and novel optoelectronic devices.