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Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor
Author(s) -
Zeng Binjian,
Liu Chen,
Dai Siwei,
Zhou Pingan,
Bao Keyu,
Zheng Shuaizhi,
Peng Qiangxiang,
Xiang Jinjuan,
Gao Jianfeng,
Zhao Jie,
Liao Min,
Zhou Yichun
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202011077
Subject(s) - materials science , ferroelectricity , optoelectronics , non volatile memory , transistor , field effect transistor , switching time , electric field , nanotechnology , dielectric , electrical engineering , voltage , engineering , physics , quantum mechanics
The ferroelectric field‐effect transistor (FeFET) is a promising memory technology due to its high switching speed, low power consumption, and high capacity. Since the recent discovery of ferroelectricity in Si‐doped HfO 2 thin films, HfO 2 ‐based materials have received considerable interest for the development of FeFET, particularly considering their excellent complementary metal‐oxide‐semiconductor (CMOS) compatibility, relatively low permittivity, and high coercive field. However, the multilevel capability is limited by the device size, and multidomain switching tends to vanish when the channel length of the HfO 2 ‐based FeFET approaches 30 nm. Here, multiple nonvolatile memory states are realized by tuning the electric field gradient across the Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric thin film along the channel direction of FeFET. The multi‐step domain switching can be readily and directionally controlled in the HZO‐FeFETs, with a very low variation. Moreover, multiple nonvolatile memory states or multi‐step domain switching can be effectively controlled in the FeFETs with a channel length less than 20 nm. This study suggests the possibility to implement multilevel memory operations and mimic biological synapse functions in highly scaled HfO 2 ‐based FeFETs.