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Epitaxial Growth of 2D Bi 2 O 2 Se Nanoplates/1D CsPbBr 3 Nanowires Mixed‐Dimensional Heterostructures with Enhanced Optoelectronic Properties
Author(s) -
Fan Chao,
Dai Beibei,
Liang Huikang,
Xu Xing,
Qi Zhuodong,
Jiang Haotian,
Duan Huigao,
Zhang Qinglin
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202010263
Subject(s) - heterojunction , materials science , epitaxy , nanowire , optoelectronics , photoluminescence , photocurrent , nanotechnology , layer (electronics)
Abstract The 2D/1D mixed‐dimensional van der Waals heterostructures have great potential for electronics and optoelectronics with high performance and multifunctionality. The epitaxy of 1D micro/nanowires on 2D layered materials may efficiently realize the large‐scale preparation of 2D/1D heterostructures, which is critically important for their practical applications. So far, however, only the wires of Bi 2 S 3 , Te, and Sb 2 Se 3 have been epitaxially grown on MoS 2 or WS 2 . Here, it is reported that the epitaxial growth of 1D CsPbBr 3 nanowires on 2D Bi 2 O 2 Se nanoplates through a facile vertical vapor deposition method. The CsPbBr 3 wires are well aligned on the Bi 2 O 2 Se plates in fourfold symmetry with the epitaxial relationships of [001] CsPbBr3 ||[200] Bi2O2Se and [1‐10] CsPbBr3 ||[020] Bi2O2Se . The photoluminescence results reveal that the emission from CsPbBr 3 is significantly quenched in the heterostructure, which implies the charge carriers transfer from CsPbBr 3 to Bi 2 O 2 Se. The waveguide characterization shows that the epitaxial CsPbBr 3 wires may efficiently confine and guide their emission, which favors the light absorption of Bi 2 O 2 Se. Importantly, the photocurrent mapping and spectra of the devices based on these 2D/1D heterostructures prove that the epitaxial CsPbBr 3 wires remarkably enhances the photoresponse of Bi 2 O 2 Se, which indicates these heterostructures can be applied in high‐performance optoelectronic devices or on‐chip integrated photonic circuits.