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Double Charge Transfer Dominates in Carrier Localization in Low Bandgap Sites of Heterogeneous Lead Halide Perovskites
Author(s) -
Fakharuddin Azhar,
Franckevičius Marius,
Devižis Andrius,
Gelžinis Andrius,
Chmeliov Jevgenij,
Heremans Paul,
Gulbinas Vidmantas
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202010076
Subject(s) - materials science , perovskite (structure) , photoluminescence , exciton , halide , band gap , charge carrier , chemical physics , charge (physics) , excited state , semiconductor , excitation , luminescence , optoelectronics , absorption (acoustics) , ultrafast laser spectroscopy , nanotechnology , condensed matter physics , atomic physics , inorganic chemistry , chemistry , spectroscopy , crystallography , physics , quantum mechanics , composite material
Heterogeneous organic‐inorganic halide perovskites possess inherent non‐uniformities in bandgap that are sometimes engineered and exploited on purpose, like in quasi‐2D perovskites. In these systems, charge carrier and excitation energy migration to lower‐bandgap sites are key processes governing luminescence. The question, which of them dominates in particular materials and under specific experimental conditions, still remains unanswered, especially when charge carriers comprise excitons. In this study transient absorption (TA) and transient photoluminescence (PL) techniques are combined to address the excited state dynamics in quasi‐2D and other heterogeneous perovskite structures in broad temperature range, from room temperature down to 15 K. The data provide clear evidence that charge carrier transfer rather than energy migration dominates in heterogeneous quasi‐2D perovskite films.