Premium
Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier
Author(s) -
Zhang Xiaoyue,
Tang Ning,
Yang Liuyun,
Fang Chi,
Wan Caihua,
Liu Xingchen,
Zhang Shixiong,
Zhang Yunfan,
Wang Xinqiang,
Lu Yuan,
Ge Weikun,
Han Xiufeng,
Shen Bo
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202009771
Subject(s) - heterojunction , condensed matter physics , materials science , quantum tunnelling , fermi gas , hanle effect , spin (aerodynamics) , relaxation (psychology) , quantum well , spintronics , spin polarization , electron , optoelectronics , magnetic field , ferromagnetism , physics , optics , psychology , social psychology , laser , quantum mechanics , thermodynamics
The spin injection into 2D electron gas (2DEG) in AlN/GaN heterostructures is studied by magneto‐transport measurements. An ultrathin AlN layer at the hetero‐interface acts as a barrier to form high‐quality 2DEG in the triangular quantum well and a tunneling barrier for the spin injection to overcome the conductance mismatch issue. In this study, Hanle signals and inversed Hanle signals are observed, proving that the spin injection is achieved in the 2DEG in the AlN/GaN heterostructure rather than in the interfacial states. The spin‐relaxation time in 2DEG at 8 K is found to be as long as 860 ps, which almost keeps constant with bias and decreases with increasing temperature. The spin‐relaxation process is illustrated as Rashba spin‐orbit coupling dominated D'yakonov Perel’ mechanisms above 8 K. These results show the promising potential of 2DEG in AlN/GaN heterostructures for spin field‐effect transistor applications.