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Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy
Author(s) -
Buckley David,
Kudrynskyi Zakhar R.,
Balakrishnan Nilanthy,
Vincent Tom,
Mazumder Debarati,
Casta Eli,
Kovalyuk Zakhar D.,
Kolosov Oleg,
Kazakova Olga,
Tzalenchuk Alexander,
Patanè Amalia
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202008967
Subject(s) - materials science , thermal conductivity , thermoelectric effect , thermoelectric materials , scanning thermal microscopy , interfacial thermal resistance , optoelectronics , nanotechnology , thermal resistance , thermal , composite material , physics , meteorology , thermodynamics
The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals 2D materials offer a versatile platform to tailor heat transfer due to their high surface‐to‐volume ratio and mechanical flexibility. Here, the nanoscale thermal properties of 2D indium selenide (InSe) are studied by scanning thermal microscopy. The high electrical conductivity, broad‐band optical absorption, and mechanical flexibility of 2D InSe are accompanied by an anomalous low thermal conductivity (κ). This can be smaller than that of low‐κ dielectrics, such as silicon oxide, and it decreases with reducing the lateral size and/or thickness of InSe. The thermal response is probed in free‐standing InSe layers as well as layers supported by a substrate, revealing the role of interfacial thermal resistance, phonon scattering, and strain. These thermal properties are critical for future emerging technologies, such as field‐effect transistors that require efficient heat dissipation or thermoelectric energy conversion with low‐κ, high electron mobility 2D materials, such as InSe.