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Controllable Formation of Ordered Vacancy Compound for High Efficiency Solution Processed Cu(In,Ga)Se 2 Solar Cells
Author(s) -
Zhao Yunhai,
Yuan Shengjie,
Chang Qianqian,
Zhou Zhengji,
Kou Dongxing,
Zhou Wenhui,
Qi Yafang,
Wu Sixin
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202007928
Subject(s) - copper indium gallium selenide solar cells , materials science , vacancy defect , optoelectronics , band gap , photovoltaic system , thin film solar cell , solar cell , stoichiometry , nanotechnology , chemical engineering , crystallography , chemistry , electrical engineering , engineering
Solution processing of Cu(In,Ga)Se 2 (CIGS) absorber makes it cost‐competitive in the photovoltaic market. It is reported that copper‐poor ordered vacancy compound (OVC) is crucial for high performance CIGS solar cells. However, in solution process method, controllable formation of OVC is unavailable and limited research has been carried out. In this work, the controllable formation of the OVC phase on the CIGS surface is successful by controlling the selenization temperature and intentional variation of Cu/(In+Ga) stoichiometry in precursors for top layers and bulk layers deposition. The effects of OVC contents on the device performance are investigated. The CIGS thin film with OVC phase exhibits a lower valence band position. Meanwhile, the CIGS devices with optimized OVC content show decreased interface defects density and better carrier collection ability. The above advantages translate into a champion PCE of 16.39% for CIGS device with OVC phase, which is the champion performance among non‐hydrazine solution‐processed CIGS solar cells. The results demonstrate that the controllable formation of OVC phase approach should make a significant contribution to the efficiency promoting of solution processed CIGS solar cells.