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Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures
Author(s) -
Wang Ding,
Chen Zhaoying,
Su Juan,
Wang Tao,
Zhang Baoqing,
Rong Xin,
Wang Ping,
Tan Wei,
Guo Shiping,
Zhang Jian,
Shen Bo,
Wang Xinqiang
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202007216
Subject(s) - materials science , quantum tunnelling , heterojunction , ternary operation , nitride , optoelectronics , electron , phase (matter) , gallium nitride , condensed matter physics , nanotechnology , layer (electronics) , physics , quantum mechanics , computer science , programming language
Resonant tunneling of electrons is important for the manufacture of high‐speed electronic oscillators and the electron injection control in quantum cascade lasers. In this work, room temperature negative differential resistance (NDR) in AlGaN/GaN double barrier structure with AlN/GaN digital alloy (DA) barriers is demonstrated. The peak‐to‐valley current ratio (PVCR) ranges from 1.1 to 1.24 at room temperature and becomes 1.5 to 2.96 at low temperatures, whereas no NDR is observed in double barrier structures with conventional ternary AlGaN barriers. The room temperature NDR together with the high PVCR at low temperature is attributed to the suppression of alloy disorder scattering by introducing AlN/GaN DA barriers. This work presents the successful control of phase‐coherent electron transport in III‐nitride heterostructures and is expected to benefit the future design of nitride‐based resonant tunneling structures and high‐speed electronic devices.