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Truly Electroforming‐Free Memristor Based on TiO 2 ‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption
Author(s) -
Wan Fuxing,
Wang Qianwen,
Harumoto Takashi,
Gao Tenghua,
Ando Kazuya,
Nakamura Yoshio,
Shi Ji
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202007101
Subject(s) - electroforming , memristor , materials science , amorphous solid , optoelectronics , resistive random access memory , non volatile memory , oxide , electrical conductor , nanotechnology , protein filament , phase (matter) , neuromorphic engineering , voltage , electronic engineering , electrical engineering , computer science , composite material , metallurgy , chemistry , organic chemistry , layer (electronics) , machine learning , artificial neural network , engineering
Oxide‐based memristor devices are being extensively studied as one of the most promising technologies for next generation nonvolatile memory and neuromorphic computing. However, the switching process of such devices relying on the formation and rupture of conductive filaments has not been easily controlled, and thus induces large cycle‐to‐cycle and device‐to‐device variations in resistive switching, which hinders the development of high‐performance memristors. High‐performance memristors that meet the requirements for truly electroforming‐free, highly uniform, and low‐power switching are yet to be developed. Here, a phase‐separated oxide memristor is demonstrated based on a spontaneous phase separation process to form amorphous TiO 2 switching medium distributed among the crystalline CoO grains. The confinement of conductive filaments into the intergrain amorphous oxide phase effectively minimizes the stochasticity of filament formation and rupture, resulting in drastically enhanced switching uniformity. The designed microstructure also facilitates filament formation and dissolution during switching processes and leads to truly electroforming‐free switching and low switching power (simultaneous low switching voltage 0.4 V and low current 2.5 µA).