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Charge Transport in High‐Mobility Field‐Effect Transistors Based on Inkjet Printed Random Networks of Polymer Wrapped Single‐Walled Carbon Nanotubes
Author(s) -
Scuratti Francesca,
SalazarRios Jorge Mario,
Luzio Alessandro,
Kowalski Sebastian,
Allard Sybille,
Jung Stefan,
Scherf Ullrich,
Loi Maria Antonietta,
Caironi Mario
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202006895
Subject(s) - materials science , carbon nanotube , percolation (cognitive psychology) , transistor , nanotechnology , charge (physics) , charge carrier , printed electronics , electronics , field effect transistor , percolation theory , band gap , electron mobility , optoelectronics , electrical engineering , topology (electrical circuits) , inkwell , voltage , composite material , physics , engineering , quantum mechanics , neuroscience , biology
Printed random networks of polymer‐wrapped multi‐chiral semiconducting carbon nanotubes (s‐SWCNTs) are an opportunity for mass‐manufacturable, high‐performance large‐area electronics. To meet this goal, a deeper understanding of charge‐transport mechanisms in such mixed networks is crucial. Here, charge transport in field‐effect transistors based on inkjet‐printed s‐SWCNTs networks is investigated, obtaining direct evidence for the phases probed by charge in the accumulated channel, which is critical information to rationalize the different transport properties obtained for different printing conditions. In particular, when the fraction of nanotubes with smaller bandgaps is efficiently interconnected, the sparse network provides efficient charge percolation for band‐like transport, with a charge mobility as high as 20.2 cm 2 V −1 s −1 . However, when the charges are forced by a less efficient morphology, to populate also higher bandgap nanotubes and and/or the wrapping polymer, thermally activated transport takes place and mobility drops. As a result, a trade‐off between network density and charge transport properties is identified for device current optimization, in both p‐ and n‐type regimes. These findings shed light on the fundamental aspects related to charge transport in printed s‐SWCNT mixed networks and contribute to devise appropriate strategies for the formulation of inks and processes towards cost‐effective mass production schemes of high‐performance large‐area electronics.