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Efficient Infrared Solar Cells Employing Quantum Dot Solids with Strong Inter‐Dot Coupling and Efficient Passivation
Author(s) -
Liu Sisi,
Zhang Chongjian,
Li Shuangyuan,
Xia Yong,
Wang Kang,
Xiong Kao,
Tang Haodong,
Lian Linyuan,
Liu Xinxing,
Li MingYu,
Tan Manlin,
Gao Liang,
Niu Guangda,
Liu Huan,
Song Haisheng,
Zhang Daoli,
Gao Jianbo,
Lan Xinzheng,
Wang Kai,
Sun Xiao Wei,
Yang Ye,
Tang Jiang,
Zhang Jianbing
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202006864
Subject(s) - passivation , quantum dot , materials science , optoelectronics , chalcogenide , solar cell , band gap , nanotechnology , layer (electronics)
Lead chalcogenide quantum dot (QD) infrared (IR) solar cells are promising devices for breaking through the theoretical efficiency limit of single‐junction solar cells by harvesting the low‐energy IR photons that cannot be utilized by common devices. However, the device performance of QD IR photovoltaic is limited by the restrictive relation between open‐circuit voltages ( V OC ) and short circuit current densities ( J SC ), caused by the contradiction between surface passivation and electronic coupling of QD solids. Here, a strategy is developed to decouple this restriction via epitaxially coating a thin PbS shell over the PbSe QDs (PbSe/PbS QDs) combined with in situ halide passivation. The strong electronic coupling from the PbSe core gives rise to significant carrier delocalization, which guarantees effective carrier transport. Benefited from the protection of PbS shell and in situ halide passivation, excellent trap‐state control of QDs is eventually achieved after the ligand exchange. By a fine control of the PbS shell thickness, outstanding IR J SC of 6.38 mA cm −2 and IR V OC of 0.347 V are simultaneously achieved under the 1100 nm‐filtered solar illumination, providing a new route to unfreeze the trade‐off between V OC and J SC limited by the photoactive layer with a given bandgap.