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2D Ruddlesden–Popper Perovskite Single Crystal Field‐Effect Transistors
Author(s) -
Liu Fengjing,
Wang Liang,
Wang Jiawei,
Wang Feng,
Chen Yiyi,
Zhang Shuai,
Sun Huijuan,
Liu Jia,
Wang Gongtang,
Hu Yuanyuan,
Jiang Chao
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202005662
Subject(s) - materials science , kelvin probe force microscope , fabrication , field effect transistor , contact resistance , optoelectronics , schottky barrier , perovskite (structure) , work function , crystal (programming language) , single crystal , electrical resistance and conductance , electron mobility , schottky diode , field effect , fermi level , nanotechnology , electrode , transistor , crystallography , electron , composite material , atomic force microscopy , voltage , electrical engineering , chemistry , alternative medicine , pathology , computer science , engineering , layer (electronics) , quantum mechanics , programming language , medicine , physics , diode
2D Ruddlesden–Popper perovskites (2D PVKs) have attracted huge interest because of their excellent optoelectronic properties, yet the understanding of their electrical properties is inadequate due to the difficulties in obtaining 2D PVK field‐effect transistors (FETs) with decent performance. Herein, the fabrication and characterization of 2D PVK ((BA) 2 (MA) n −1 Pb n I 3 n +1 ) single crystal FETs are reported, which exhibit reliable field effect electrical characteristics at low temperatures. Kelvin probe force microscopy (KPFM) results reveal that both ion migration and contact resistance seriously degrade device performance. While ion migration can be suppressed at low temperatures, contact resistance seems to fundamentally determine device performance. On one hand, Schottky contacts are observed to form at the metal/2D PVK interface because of Fermi level pinning, resulting in significant charge injection resistance, although this can be remarkably improved by replacing Au electrodes with Ca. On the other hand, the out‐of‐plane mobility is found to be three orders of magnitude lower than the in‐plane mobility in 2D PVKs, causing large interlayer transport resistance. Thus, a low work‐function metal and a thin crystal are important for achieving high device performance. This work provides important experimental insights into fabrication and electrical properties of 2D PVK FETs.