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Printable Organic‐Inorganic Nanoscale Multilayer Gate Dielectrics for Thin‐Film Transistors Enabled by a Polymeric Organic Interlayer
Author(s) -
Chen Yao,
Zhuang Xinming,
Goldfine Elise A.,
Dravid Vinayak P.,
Bedzyk Michael J.,
Huang Wei,
Facchetti Antonio,
Marks Tobin J.
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202005069
Subject(s) - materials science , organic electronics , spin coating , optoelectronics , thin film transistor , dielectric , layer (electronics) , fabrication , coating , nanotechnology , flexible electronics , transistor , voltage , medicine , physics , alternative medicine , quantum mechanics , pathology
Here, a new approach to the layer‐by‐layer solution‐processed fabrication of organic/inorganic hybrid self‐assembled nanodielectrics (SANDs) is reported and it is demonstrated that these ultrathin gate dielectric films can be printed. The organic SAND component, named P‐PAE, consists of polarizable π‐electron phosphonic acid‐based units bound to a polymeric backbone. Thus, the new polymeric SAND (PSAND) can be fabricated either by spin‐coating or blade‐coating in air, by alternating P‐PAE, a capping reagent layer, and an ultrathin ZrOx layer. The new PSANDs thickness vary from 6 to 15 nm depending on the number of organic‐ZrOx bilayers, exhibit tunable film thickness, well‐defined nanostructures, large electrical capacitance (up to 558 nF cm −2 ), and good insulating properties (leakage current densities as low as 10 −6 A cm −2 ). Organic thin‐film transistors that are fabricated with representative p‐/n‐type organic molecular/polymeric semiconducting materials, function well at low voltages (<3.0 V). Furthermore, flexible TFTs fabricated with PSAND exhibit excellent mechanical flexibility and good stress stability, offering a promising route to low operating voltage flexible electronics. Finally, printable PSANDs are also demonstrated and afford TFTs with electrical properties comparable to those achieved with the spin‐coated PSAND‐based devices.