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High‐Dynamic‐Range Pressure Mapping Interactions by Dual Piezo‐Phototronic Transistor with Piezo‐Nanowire Channels and Piezo‐OLED Gates
Author(s) -
Jiang Chengming,
Li Qikun,
Sun Nan,
Huang Jijie,
Bi Sheng,
Ji Ruonan,
Guo Qinglei,
Song Jinhui
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202004724
Subject(s) - materials science , nanowire , transistor , optoelectronics , electronic skin , sensitivity (control systems) , pressure sensor , capacitive sensing , electronic engineering , electrical engineering , mechanical engineering , voltage , engineering
Advanced‐performance haptic systems, with high dynamic range (DR) and high pressure sensitivity, that accurately sense the small force variations with a wide detection range are essential for robotic systems, human‐machine interactions, and medical monitoring devices. However, existing skin‐like devices, such as capacitive or electrical transistor detectors, are limited by pressure contrast or recognition accuracy, thereby blocking the development of practical engineering. In the present study, an innovative pressure mapping interaction (PMI) based on dual piezo‐phototronic transistors (DPTs) is manufactured with the capability of detecting a large pressure gradient within a wide output range for providing more tactile details. The fabricated DPT, which integrates a piezo‐nanowire channel and a piezo‐OLED gate as one module with dual enhancements of the piezo‐phototronic effect, exhibits a high DR of ≈120 dB with ≈61.2 µS kPa −1 of pressure sensitivity in the effective working region. Furthermore, by employing the diminutive DPT as the PMI pixel, the device can obtain a high position resolution of 5 µm in the optimized array structure. The methods for designing and applying the PMI demonstrate effective processes for combining the piezo‐OLED gates and the piezo‐nanowire channels, which are responsible for improving the characteristics of the pressure‐relative electrical skin and others.