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Long‐Term Retention of Low‐Power, Nonvolatile Organic Transistor Memory Based on Ultrathin, Trilayered Dielectric Containing Charge Trapping Functionality
Author(s) -
Lee Changhyeon,
Pak Kwanyong,
Choi Junhwan,
Kim Min Ju,
Cho Byung Jin,
Im Sung Gap
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202004665
Subject(s) - materials science , dielectric , non volatile memory , optoelectronics , stacking , substrate (aquarium) , chemical engineering , organic chemistry , chemistry , oceanography , engineering , geology
A new strategy for multilayer stacking using charge trapping layer (CTL) is proposed and a new CTL material is synthesized, which contains a trilayer dielectric with the total thickness less than 28 nm, deposited by initiated chemical vapor deposition (iCVD) process. 2.6 nm thick poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) and 19 nm thick poly(1,4‐butanediol diacrylate) (pBDDA) are employed as tunneling and blocking dielectric layers, respectively. A 6 nm thick ultrathin charge trapping layer containing hydroxyl group is inserted between the tunneling and the blocking layers for stable, long‐term memory operation. For this purpose, a homogeneous copolymer of 1,4‐butanediol diacrylate and 2‐hydroxyethyl acrylate is newly synthesized. The fabricated memory with the trilayer dielectric shows larger than 5.8 V of memory window at low programming/erasing voltage of 16 V. The retention characteristics of the low‐power organic memory device is improved significantly with the drain current decrease less than 0.40 order after 10 8 s, corresponding to one of the longest retention time periods obtained from organic NVM reported to date. The low‐power organic NVM could also be integrated on flexible substrate, which is fully operational even under 2.72% of applied strain.