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A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency
Author(s) -
Chen Jianhui,
Wan Lu,
Li Han,
Yan Jun,
Ma Jikui,
Sun Biao,
Li Feng,
Flavel Benjamin S.
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202004476
Subject(s) - materials science , passivation , dopant , wafer , silicon , amorphous silicon , boron , photovoltaics , optoelectronics , nanotechnology , solar cell , crystalline silicon , layer (electronics) , photovoltaic system , doping , electrical engineering , chemistry , organic chemistry , engineering
Traditional silicon solar cells extract holes and achieve interface passivation with the use of a boron dopant and dielectric thin films such as silicon oxide or hydrogenated amorphous silicon. Without these two key components, few technologies have realized power conversion efficiencies above 20%. Here, a carbon nanotube ink is spin coated directly onto a silicon wafer to serve simultaneously as a hole extraction layer, but also to passivate interfacial defects. This enables a low‐cost fabrication process that is absent of vacuum equipment and high‐temperatures. Power conversion efficiencies of 21.4% on an device area of 4.8 cm 2 and 20% on an industrial size (245.71 cm 2 ) wafer are obtained. Additionally, the high quality of this passivated carrier selective contact affords a fill factor of 82%, which is a record for silicon solar cells with dopant‐free contacts. The combination of low‐dimensional materials with an organic passivation is a new strategy to high performance photovoltaics.