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Optoelectronic Ferroelectric Domain‐Wall Memories Made from a Single Van Der Waals Ferroelectric
Author(s) -
Xue Fei,
He Xin,
Liu Wenhao,
Periyanagounder Dharmaraj,
Zhang Chenhui,
Chen Mingguang,
Lin ChunHo,
Luo Linqu,
Yengel Emre,
Tung Vincent,
Anthopoulos Thomas D.,
Li LainJong,
He JrHau,
Zhang Xixiang
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202004206
Subject(s) - ferroelectricity , materials science , optoelectronics , photocurrent , van der waals force , neuromorphic engineering , band gap , photonics , ferroelectric capacitor , nanotechnology , dielectric , computer science , physics , quantum mechanics , molecule , machine learning , artificial neural network
Due to the potential applications in optoelectronic memories, optical control of ferroelectric domain walls has emerged as an intriguing and important topic in modern solid‐state physics. However, its device implementation in a single ferroelectric, such as conventional BaTiO 3 or PZT ceramics, still presents huge challenges in terms of the poor material conductivity and the energy mismatch between incident photons and ferroelectric switching. Here, using the generation of photocurrent in conductive α‐In 2 Se 3 (a van der Waals ferroelectric) with a two‐terminal planar architecture, the first demonstration of optical‐engineered ferroelectric domain wall in a non‐volatile manner for optoelectronic memory application is reported. The α‐In 2 Se 3 device exhibits a large optical‐writing and electrical‐erasing (on/off) ratio of >10 4 , as well as multilevel current switching upon optical excitation. The narrow direct bandgap of the multilayer α‐In 2 Se 3 ferroelectric endows the device with broadband optical‐writing wavelengths greater than 900 nm. In addition, photonic synapses with approximate linear weight updates for neuromorphic computing are also achieved in the ferroelectric devices. This work represents a breakthrough toward technological applications of ferroelectric nanodomain engineering by light.