Premium
Process Pathway Controlled Evolution of Phase and Van‐der‐Waals Epitaxy in In/In 2 O 3 on Graphene Heterostructures
Author(s) -
Elibol Kenan,
Mangler Clemens,
Gupta Tushar,
Zagler Georg,
Eder Dominik,
Meyer Jannik C.,
Kotakoski Jani,
Bayer Bernhard C.
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202003300
Subject(s) - graphene , materials science , heterojunction , ultra high vacuum , nanotechnology , scanning transmission electron microscopy , fabrication , van der waals force , chemical vapor deposition , x ray photoelectron spectroscopy , optoelectronics , chemical engineering , transmission electron microscopy , chemistry , medicine , alternative medicine , organic chemistry , pathology , molecule , engineering
Many applications of 2D materials require deposition of non‐2D metals and metal‐oxides onto the 2D materials. Little is however known about the mechanisms of such non‐2D/2D interfacing, particularly at the atomic scale. Here, atomically resolved scanning transmission electron microscopy (STEM) is used to follow the entire physical vapor deposition (PVD) cycle of application‐relevant non‐2D In/In 2 O 3 nanostructures on graphene. First, a “quasi‐in‐situ” approach with indium being in situ evaporated onto graphene in oxygen‐/water‐free ultra‐high‐vacuum (UHV) is employed, followed by STEM imaging without vacuum break and then repeated controlled ambient air exposures and reloading into STEM. This allows stepwise monitoring of the oxidation of specific In particles toward In 2 O 3 on graphene. This is then compared with conventional, scalable ex situ In PVD onto graphene in high vacuum (HV) with significant residual oxygen/water traces. The data shows that the process pathway difference of oxygen/water feeding between UHV/ambient and HV fabrication drastically impacts not only non‐2D In/In 2 O 3 phase evolution but also In 2 O 3 /graphene out‐of‐plane texture and in‐plane rotational van‐der‐Waals epitaxy. Since non‐2D/2D heterostructures' properties are intimately linked to their structure and since influences like oxygen/water traces are often hard to control in scalable fabrication, this is a key finding for non‐2D/2D integration process design.