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Direct Patterning of Metal Chalcogenide Semiconductor Materials
Author(s) -
Wang Wei,
Pfeiffer Patrick,
SchmidtMende Lukas
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202002685
Subject(s) - materials science , lithography , nanotechnology , chalcogenide , semiconductor , next generation lithography , photolithography , electron beam lithography , stencil lithography , optoelectronics , nanolithography , resist , nanowire , fabrication , medicine , alternative medicine , layer (electronics) , pathology
Lithography is one of the most widely used methods for cutting‐edge research and industrial applications, mainly owing to its ability to draw patterns in the micro and even nanoscale. However, the fabrication of semiconductor micro/nanostructures via conventional electron or optical lithography technologies often requires a time‐consuming multistep process and the use of expensive facilities. Herein, a low‐cost, high‐resolution, facile, and versatile direct patterning method based on metal–organic molecular precursors is reported. The ink‐based metal–organic precursors are found to operate as negative resists, with the material exposed by different methods (electron‐beam/laser/heat/ultraviolet (UV)) to render them insoluble in the development process. This technical process can deliver metal chalcogenide semiconductors with arbitrary 2D/3D patterns with sub‐50 nm resolution. Electron beam lithography, two‐photon absorption lithography, thermal scanning probe lithography, and UV photolithography are demonstrated for the direct patterning process. Different metal chalcogenide semiconductor nanodevices, such as photoconductive selenium‐doped Sb 2 S 3 nanoribbons, p‐type PbS single‐nanowire field‐effect transistors, and p‐n junction CdS/Cu 2 S nanowire solar cells, are fabricated by this method. This direct patterning technique is a versatile and simple micro/nanolithography technology with considerable potential for “lab‐on‐a‐chip” preparation of semiconductor devices.