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Transition‐Metal Dichalcogenide NiTe 2 : An Ambient‐Stable Material for Catalysis and Nanoelectronics
Author(s) -
Nappini Silvia,
Boukhvalov Danil W.,
D'Olimpio Gianluca,
Zhang Libo,
Ghosh Barun,
Kuo ChiaNung,
Zhu Haoshan,
Cheng Jia,
Nardone Michele,
Ottaviano Luca,
Mondal Debashis,
Edla Raju,
Fuji Jun,
Lue Chin Shan,
Vobornik Ivana,
Yarmoff Jory A.,
Agarwal Amit,
Wang Lin,
Zhang Lixue,
Bondino Federica,
Politano Antonio
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202000915
Subject(s) - nanoelectronics , transition metal , passivation , catalysis , materials science , water splitting , hydrogen , oxygen , nanotechnology , stability (learning theory) , atmosphere (unit) , chemical physics , optoelectronics , chemistry , layer (electronics) , physics , computer science , thermodynamics , organic chemistry , photocatalysis , machine learning
By means of theory and experiments, the application capability of nickel ditelluride (NiTe 2 ) transition‐metal dichalcogenide in catalysis and nanoelectronics is assessed. The Te surface termination forms a TeO 2 skin in an oxygen environment. In ambient atmosphere, passivation is achieved in less than 30 min with the TeO 2 skin having a thickness of about 7 Å. NiTe 2 shows outstanding tolerance to CO exposure and stability in water environment, with subsequent good performance in both hydrogen and oxygen evolution reactions. NiTe 2 ‐based devices consistently demonstrate superb ambient stability over a timescale as long as one month. Specifically, NiTe 2 has been implemented in a device that exhibits both superior performance and environmental stability at frequencies above 40 GHz, with possible applications as a receiver beyond the cutoff frequency of a nanotransistor.