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Couplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switching
Author(s) -
Chen Aiping,
Zhang Wenrui,
Dedon Liv R.,
Chen Di,
Khatkhatay Fauzia,
MacManusDriscoll Judith L.,
Wang Haiyan,
Yarotski Dmitry,
Chen Jun,
Gao Xingsun,
Martin Lane W.,
Roelofs Andreas,
Jia Quanxi
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202000664
Subject(s) - ferroelectricity , memristor , materials science , neuromorphic engineering , schottky diode , non volatile memory , polarization (electrochemistry) , optoelectronics , schottky barrier , ferroelectric capacitor , nanotechnology , diode , electronic engineering , computer science , engineering , dielectric , chemistry , machine learning , artificial neural network
Memristors with excellent scalability have the potential to revolutionize not only the field of information storage but also neuromorphic computing. Conventional metal oxides are widely used as resistive switching materials in memristors. Interface‐type memristors based on ferroelectric materials are emerging as alternatives in the development of high‐performance memory devices. A clear understanding of the switching mechanisms in this type of memristors, however, is still in its early stages. By comparing the bipolar switching in different systems, it is found that the switchable diode effect in ferroelectric memristors is controlled by polarization modulated Schottky barrier height and polarization coupled interfacial deep states trapping/detrapping. Using semiconductor theories with consideration of polarization effects, a phenomenological theory is developed to explain the current–voltage behavior at the metal/ferroelectric interface. These findings reveal the critical role of the interaction among polarization charges, interfacial defects, and Schottky interface in controlling ferroelectric resistive switching and offer the guidance to design ferroelectric memristors with enhanced performance.