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Understanding Temperature‐Dependent Charge Extraction and Trapping in Perovskite Solar Cells
Author(s) -
Zhou Qian,
Wang Boxing,
Meng Rui,
Zhou Jiyu,
Xie Shenkun,
Zhang Xuning,
Wang Jianqiu,
Yue Shengli,
Qin Bing,
Zhou Huiqiong,
Zhang Yuan
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202000550
Subject(s) - materials science , passivation , perovskite (structure) , triiodide , trapping , photovoltaic system , energy conversion efficiency , charge (physics) , optoelectronics , band gap , atmospheric temperature range , layer (electronics) , chemical physics , nanotechnology , chemical engineering , dye sensitized solar cell , thermodynamics , electrode , chemistry , ecology , physics , quantum mechanics , engineering , biology , electrolyte
Understanding the factors that limit the performance of perovskite solar cells (PSCs) can be enriched by detailed temperature ( T )‐dependent studies. Based on p‐i‐n type PSCs with prototype methylammonium lead triiodide (MAPbI 3 ) perovskite absorbers, T ‐dependent photovoltaic properties are explored and negative T ‐coefficients for the three device parameters ( V OC , J SC , and FF) are observed within a wide low T ‐range, leading to a maximum power conversion efficiency (PCE) of 21.4% with an impressive fill factor (FF) approaching 82% at 220 K. These T ‐behaviors are explained by the enhanced interfacial charge transfer, reduced charge trapping with suppressed nonradiative recombination and narrowed optical bandgap at lower T . By comparing the T ‐dependent device behaviors based on MAPbI 3 devices containing a PASP passivation layer, enhanced PCE at room temperature is observed but different tendencies showing attenuating T ‐dependencies of J SC and FF, which eventually leads to nearly T ‐invariable PCEs. These results indicate that charge extraction with the utilized all‐organic charge transporting layers is not a limiting factor for low‐ T device operation, meanwhile the trap passivation layer of choice can play a role in the T ‐dependent photovoltaic properties and thus needs to be considered for PSCs operating in a temperature‐variable environment.