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Quantum Dot LEDs: Over 30% External Quantum Efficiency Light‐Emitting Diodes by Engineering Quantum Dot‐Assisted Energy Level Match for Hole Transport Layer (Adv. Funct. Mater. 33/2019)
Author(s) -
Song Jiaojiao,
Wang Ouyang,
Shen Huaibin,
Lin Qingli,
Li Zhaohan,
Wang Lei,
Zhang Xintong,
Li Lin Song
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201970226
Subject(s) - quantum dot , light emitting diode , materials science , optoelectronics , diode , brightness , layer (electronics) , quantum efficiency , quantum , core (optical fiber) , nanotechnology , optics , physics , quantum mechanics , composite material
In article number 1808377, Huaibin Shen, Lin Song Li, and co‐workers fabricate light‐emitting diodes with an external quantum efficiency >30% by exploiting Zn 1− x Cd x Se core/shell quantum dots with ZnSe as the intermediate layer and ultrathin ZnS. The maximum brightness achieved is up to 334 000 cd m −2 , and the operational lifetime is extended to ≈1 800 000 h at 100 cd m −2 .
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