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Semiconductors: X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO 3 Interfaces (Adv. Funct. Mater. 25/2019)
Author(s) -
Chikina Alla,
Caputo Marco,
Naamneh Muntaser,
Christensen Dennis Valbjørn,
Schmitt Thorsten,
Radovic Milan,
Strocov Vladimir N.
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201970172
Subject(s) - materials science , semiconductor , silicon , amorphous solid , metal , oxide , oxygen , nanotechnology , lithography , electronic materials , optoelectronics , crystallography , metallurgy , chemistry , organic chemistry
Two‐dimensional electronic states at interfaces are often endowed with novel properties that are promising for future technological applications. Defects at oxide interfaces, in particular, oxygen vacancies play a major role in controlling electronic and magnetic properties at the interfaces. In article number 1900645 , Alla Chikina and co‐workers report lithography‐like writing of a metallic state at the interface between SrTiO 3 and amorphous Si using X‐ray irradiation.
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