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InSe Tribotronic Transistors: Low‐Voltage Operational, Low‐Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics (Adv. Funct. Mater. 19/2019)
Author(s) -
Li Mengjiao,
Yang FengShou,
Hsiao YungChi,
Lin CheYi,
Wu HsingMei,
Yang ShihHsien,
Li HaoRuei,
Lien ChenHsin,
Ho ChingHwa,
Liu HengJui,
Li Wenwu,
Lin YenFu,
Lai YingChih
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201970125
Subject(s) - materials science , transistor , low voltage , voltage , optoelectronics , electronics , sensitivity (control systems) , modulation (music) , power (physics) , flexible electronics , electrical engineering , tactile sensor , nanotechnology , computer science , electronic engineering , engineering , acoustics , physics , quantum mechanics , artificial intelligence , robot
Tribotronics is believed to be a promising technology to drive electronics by external stimulation. In article number 1809119 , Wenwu Li, Yen‐Fu Lin, Ying‐Chih Lai, and co‐workers demonstrate a low‐voltage operational, integratable, powering saving, and high sensitivity tactile sensor based on a InSe tribotronic transistor. The ultrahigh on/off current modulation and extraordinarily low operation voltage of the 2D‐layered user‐interactive system set new records for smart tribotronics, which could benefit the progress of 2D material devices for potential applications in smart interfaces.