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Nanobelt Photodetectors: High‐Performance SiC Nanobelt Photodetectors with Long‐Term Stability Against 300 °C up to 180 Days (Adv. Funct. Mater. 11/2019)
Author(s) -
Yang Tao,
Chen Shanliang,
Li Xiaoxiao,
Xu Xiaojie,
Gao Fengmei,
Wang Lin,
Chen Junhong,
Yang Weiyou,
Hou Xinmei,
Fang Xiaosheng
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201970066
Subject(s) - photodetector , materials science , term (time) , optoelectronics , nanotechnology , physics , quantum mechanics
In article number 1806250 , Weiyou Yang, Xinmei Hou, Xiaosheng Fang, and co‐workers report B‐doped SiC nanobelt photodetectors, with a responsivity and external quantum efficiency of 6.37 × 10 5 A·W −1 and 2.0 × 10 8 % under 405 nm light with 0.14 mW·cm −2 power density at 5 V, respectively. Furthermore, they had a detectivity of 6.86 × 10 14 Jones with long‐term stability against 300 °C up to 180 days.