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Metal‐Insulator‐Metal Diodes: Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition (Adv. Funct. Mater. 7/2019)
Author(s) -
Alshehri Abdullah H.,
Mistry Kissan,
Nguyen Viet Huong,
Ibrahim Khaled H.,
MuñozRojas David,
Yavuz Mustafa,
Musselman Kevin P.
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201970042
Subject(s) - materials science , metal insulator metal , chemical vapor deposition , diode , quantum tunnelling , insulator (electricity) , metal , optoelectronics , fabrication , atomic layer deposition , atmospheric pressure , nanotechnology , thin film , metallurgy , medicine , physics , alternative medicine , pathology , quantum mechanics , voltage , capacitor , oceanography , geology
In article number 1805533 , David Muñoz‐Rojas, Kevin P. Musselman, and co‐workers fabricate a quantum‐tunneling metal‐insulator‐metal (MIM) diode using a rapid atmospheric pressure chemical vapor deposition technique, demonstrating that clean room fabrication is not a prerequisite for quantumenabled devices. Uniform Al 2 O 3 films 6 nm thick are coated in 15 seconds in open‐air, resulting in MIM diodes with better performance than similar diodes made by plasma‐enhanced atomic layer deposition.