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Thin Films: Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin‐Film Circuitry for Low‐Cost Wireless Energy Harvesting (Adv. Funct. Mater. 5/2019)
Author(s) -
Son Youngbae,
Peterson Rebecca L.
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201970029
Subject(s) - materials science , thin film , nanotechnology , diode , thin film transistor , fabrication , semiconductor , redox , optoelectronics , molybdenum , diffusion , transistor , oxide , electrical engineering , voltage , medicine , alternative medicine , engineering , layer (electronics) , pathology , metallurgy , physics , thermodynamics
In article number 1806002 , Rebecca L. Peterson and Youngbae Son report a simple process for simultaneous fabrication of thin film diodes and transistors using selective‐area reactions. In some regions, thermodynamically‐driven redox and diffusion of a molybdenum film during oxide semiconductor deposition forms a rectifying contact, whereas in areas without exposed metal, oxide transistors are made. RF wireless energy harvesting circuits are demonstrated. This work opens the door for future low‐cost, multi‐functional thin film electronics.