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Field Effect Transistors: Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors (Adv. Funct. Mater. 3/2019)
Author(s) -
Lieb Johanna,
Demontis Valeria,
Prete Domenic,
Ercolani Daniele,
Zannier Valentina,
Sorba Lucia,
Ono Shimpei,
Beltram Fabio,
Sacépé Benjamin,
Rossella Francesco
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201970014
Subject(s) - nanowire , materials science , gating , transistor , field effect transistor , electrode , ionic bonding , ionic liquid , ion , optoelectronics , electric field , nanotechnology , voltage , electrical engineering , biophysics , chemistry , biochemistry , physics , engineering , organic chemistry , quantum mechanics , biology , catalysis
In article number 1804378 , Francesco Rossella and co‐workers describe a single n‐type InAs nanowire, electrically contacted, which is surrounded by an ionic liquid – a neutral ensemble of positive and negative ions, liquid at room temperature. A large metallic electrode forces the positive ions to wrap the nanowire. The resulting electric field induces electron accumulation in the nanowire. The ionic liquid gating outstandingly drives the nanowire based field effect transistor.