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Tuning Memristivity by Varying the Oxygen Content in a Mixed Ionic–Electronic Conductor
Author(s) -
Maas Klaasjan,
Villepreux Edouard,
Cooper David,
SalasColera Eduardo,
RubioZuazo Juan,
Castro German R.,
Renault Olivier,
Jimenez Carmen,
Roussel Hervé,
Mescot Xavier,
Rafhay Quentin,
Boudard Michel,
Burriel Mónica
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201909942
Subject(s) - neuromorphic engineering , materials science , ionic bonding , computer science , annealing (glass) , electrical conductor , optoelectronics , nanotechnology , chemistry , artificial neural network , artificial intelligence , ion , composite material , organic chemistry
The rising interest shown for adaptable electronics and brain‐inspired neuromorphic hardware increases the need for new device architectures and functional materials to build such devices. The rational design of these memory components also benefits the comprehension and thus the control over the microscopic mechanisms at the origin of memristivity. In oxide‐based valence‐change memories, the control of the oxygen drift and diffusion kinetics is a key aspect in obtaining the gradual analog‐type change in resistance required for artificial synapse applications. However, only a few devices are designed with this in mind, as they are commonly built around ionic insulating active materials. This shortcoming is addressed by using a mixed ionic–electronic conductor as functional memristive material. This work demonstrates how the oxygen content in La 2 NiO 4+ δ (L2NO4), tuned through post‐annealing treatments, has a critical influence on the memory characteristics of L2NO4‐based memristive devices. The presence of interstitial oxygen point defects in L2NO4 affects both its structure and electrical properties. High oxygen stoichiometry in the pristine state leads to an increased electrical conductivity, ultimately resulting in an improved memory window with highly multilevel, analog‐type memory programing capabilities, desirable for analog computing and synaptic applications in particular.