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Electric Field Effect on the Reactivity of Solid State Materials: The Case of Single Layer Graphene
Author(s) -
Kim Min A.,
Qiu Nianxiang,
Li Zhiting,
Huang Qing,
Chai Zhifang,
Du Shiyu,
Liu Haitao
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201909269
Subject(s) - materials science , graphene , reactivity (psychology) , doping , raman spectroscopy , electric field , chemical physics , density functional theory , wafer , nanotechnology , analytical chemistry (journal) , optoelectronics , computational chemistry , optics , organic chemistry , chemistry , medicine , alternative medicine , physics , pathology , quantum mechanics
This manuscript reports the first example of charge‐doping‐induced reactivity enhancement in macroscopic‐sized solid state material. Single layer graphene is supported on a Si wafer that has a 300 nm thick SiO 2 layer and is heated photothermally in air to ≈240 °C. Applying both positive and negative pulsed back gate voltages increases the rate of graphene oxidation, as measured by the change of I D / I G ratio using Raman spectroscopy. The fact that both electron and hole doping increase the reactivity argues against electrochemical oxidation and suggests a new mechanism is at play. The enhancement effect increases with the magnitude and the frequency of the square wave back gate voltage. Density functional theory calculations indicate that the activation barriers for O 2 insertion into graphene and desorption of CO 2 decrease in the presence of an electric field. This study suggests charge doping as a new approach that can modulate the reactivity of solid state materials in real time and compliment chemical‐based catalysis.