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Origin of Grain Size Effects on Voltage‐Driven Ferroelastic Domain Evolution in Polycrystalline Tetragonal Lead Zirconate Titanate Thin Film
Author(s) -
Yazawa Keisuke,
Uchida Hiroshi,
Blendell John E.
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201909100
Subject(s) - materials science , lead zirconate titanate , grain size , condensed matter physics , crystallite , domain wall (magnetism) , piezoelectricity , hysteresis , microstructure , tetragonal crystal system , ferroelectricity , composite material , crystallography , magnetization , dielectric , metallurgy , crystal structure , optoelectronics , physics , chemistry , quantum mechanics , magnetic field
Grain size effects on electromechanical properties and voltage‐driven ferroelastic domain wall motion are a well‐known phenomenon in polycrystalline ferroelectrics. Here, the origin of the grain size effects on voltage‐driven ferroelastic domain wall motion is presented with the direct observation of ferroelastic domain evolution with applied DC voltage by piezoelectric force microscopy and polarization hysteresis loop. It is demonstrated that the microstructure parameter for controlling the voltage‐driven ferroelastic domain wall motion is the number of colonies of stripe domains in a grain rather than the grain size. Single colony grains do not show considerable out‐of‐plane (001) domain width change whereas multiple colony grains exhibit significant domain width increase with an applied DC voltage. No independent grain size effect on ferroelastic domain wall motion is observed in the grain size range 0.6–1.6 µm.