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Nonlayered CdSe Flakes Homojunctions
Author(s) -
Jin Bao,
Liang Fei,
Hu ZhiYi,
Wei Ping,
Liu Kailang,
Hu Xiaozong,
Van Tendeloo Gustaaf,
Lin Zheshuai,
Li Huiqiao,
Zhou Xing,
Xiong Qihua,
Zhai Tianyou
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201908902
Subject(s) - homojunction , materials science , wurtzite crystal structure , optoelectronics , nanotechnology , heterojunction , zinc , metallurgy
2D homojunctions have stimulated extensive attention because of their perfect thermal and lattice matches, as well as their tunable band structures in 2D morphology, which provide fascinating opportunities for novel electronics and optoelectronics. Recently, 2D nonlayered materials have attracted the attention of researchers owing to their superior functional applications and diverse portfolio of the 2D family. Therefore, 2D nonlayered homojunctions would open the door to a rich spectrum of exotic 2D materials. However, they are not investigated due to their extremely difficult synthesis methods. Herein, nonlayered CdSe flakes homojunctions are obtained via self‐limited growth with InCl 3 as a passivation agent. Interestingly, two pieces of vertical wurtzite‐zinc blende (WZ‐ZB) homojunctions epitaxially integrate into WZ/ZB lateral junctions. These homojunctions show a divergent second‐harmonic generation intensity, strongly correlated to the multiple twinned ZB phase, as identified by aberration‐corrected scanning transmission electron microscopy and theoretical calculations. Impressively, the photodetector based on this WZ/ZB CdSe homojunction shows excellent performances, integrating a high photoswitching ratio (3.4 × 10 5 ) and photoresponsivity (3.7 × 10 3 A W −1 ), suggesting promising potential for applications in electronics and optoelectronics.