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Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays
Author(s) -
Chee SangSoo,
Lee WonJune,
Jo YongRyun,
Cho Min Kyung,
Chun DongWon,
Baik Hionsuck,
Kim BongJoong,
Yoon MyungHan,
Lee Kayoung,
Ham MoonHo
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201908147
Subject(s) - molybdenum disulfide , materials science , monolayer , raman spectroscopy , molybdenum , x ray photoelectron spectroscopy , photoluminescence , vacancy defect , chemical vapor deposition , sulfur , doping , spectroscopy , optoelectronics , nanotechnology , analytical chemistry (journal) , crystallography , chemical engineering , optics , chemistry , organic chemistry , metallurgy , physics , engineering , quantum mechanics
Defect engineering of 2D transition metal dichalcogenides (TMDCs) is essential to modulate their optoelectrical functionalities, but there are only a few reports on defect‐engineered TMDC device arrays. Herein, the atomic vacancy control and elemental substitution in a chemical vapor deposition (CVD)‐grown molybdenum disulfide (MoS 2 ) monolayer via mild photon irradiation under controlled atmospheres are reported. Raman spectroscopy, photoluminescence, X‐ray, and ultraviolet photoelectron spectroscopy comprehensively demonstrate that the well‐controlled photoactivation delicately modulates the sulfur‐to‐molybdenum ratio as well as the work function of a MoS 2 monolayer. Furthermore, the atomic‐resolution scanning transmission electron microscopy directly confirms that small portions (2–4 at% corresponding to the defect density of 4.6 × 10 12 to 9.2 × 10 13 cm −2 ) of sulfur vacancies and oxygen substituents are generated in the MoS 2 while the overall atomic‐scale structural integrity is well preserved. Electronic and optoelectronic device arrays are also realized using the defect‐engineered CVD‐grown MoS 2 , and it is further confirmed that the well‐defined sulfur vacancies and oxygen substituents effectively give rise to the selective n‐ and p‐doping in the MoS 2 , respectively, without the trade‐off in device performance. In particular, low‐percentage oxygen‐doped MoS 2 devices show outstanding optoelectrical performance, achieving a detectivity of ≈10 13 Jones and rise/decay times of 0.62 and 2.94 s, respectively.