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Mitigating Plasmonic Absorption Losses at Rear Electrodes in High‐Efficiency Silicon Solar Cells Using Dopant‐Free Contact Stacks
Author(s) -
Zhong Sihua,
Dreon Julie,
Jeangros Quentin,
Aydin Erkan,
De Wolf Stefaan,
Fu Fan,
Boccard Mathieu,
Ballif Christophe
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201907840
Subject(s) - materials science , optoelectronics , dopant , silicon , absorption (acoustics) , doping , solar cell , plasmonic solar cell , free carrier absorption , fabrication , charge carrier , energy conversion efficiency , nanotechnology , polymer solar cell , medicine , alternative medicine , pathology , composite material
Although charge‐carrier selectivity in conventional crystalline silicon (c‐Si) solar cells is usually realized by doping Si, the presence of dopants imposes inherent performance limitations due to parasitic absorption and carrier recombination. The development of alternative carrier‐selective contacts, using non‐Si electron and hole transport layers, has the potential to overcome such drawbacks and simultaneously reduce the cost and/or simplify the fabrication process of c‐Si solar cells. Nevertheless, devices relying on such non‐Si contacts with power conversion efficiencies (PCEs) that rival their classical counterparts are yet to be demonstrated. In this study, one key element is brought forward toward this demonstration by incorporating low‐pressure chemical vapor deposited ZnO as the electron transport layer in c‐Si solar cells. Placed at the rear of the device, it is found that rather thick (75 nm) ZnO film capped with LiF x /Al simultaneously enables efficient electron selectivity and suppression of parasitic infrared absorption. Next, these electron‐selective contacts are integrated in c‐Si solar cells with MoO x ‐based hole‐collecting contacts at the device front to realize full‐area dopant‐free‐contact solar cells. In the proof‐of‐concept device, a PCE as high as 21.4% is demonstrated, which is a record for this novel device class and is at the level of conventional industrial solar cells.