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Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes
Author(s) -
Wei Nan,
Laiho Patrik,
Khan Abu Taher,
Hussain Aqeel,
Lyuleeva Alina,
Ahmed Saeed,
Zhang Qiang,
Liao Yongping,
Tian Ying,
Ding ErXiong,
Ohno Yutaka,
Kauppinen Esko I.
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201907150
Subject(s) - materials science , carbon nanotube , nanomaterials , nanotechnology , chemical vapor deposition , fabrication , characterization (materials science) , transistor , field effect transistor , palladium , metal , catalysis , organic chemistry , voltage , chemistry , alternative medicine , medicine , pathology , physics , quantum mechanics , metallurgy
In this work, a fast approach for the fabrication of hundreds of ultraclean field‐effect transistors (FETs) is introduced, using single‐walled carbon nanotubes (SWCNTs). The synthesis of the nanomaterial is performed by floating‐catalyst chemical vapor deposition, which is employed to fabricate high‐performance thin‐film transistors. Combined with palladium metal bottom contacts, the transport properties of individual SWCNTs are directly unveiled. The resulting SWCNT‐based FETs exhibit a mean field‐effect mobility, which is 3.3 times higher than that of high‐quality solution‐processed CNTs. This demonstrates that the hereby used SWCNTs are superior to comparable materials in terms of their transport properties. In particular, the on–off current ratios reach over 30 million. Thus, this method enables a fast, detailed, and reliable characterization of intrinsic properties of nanomaterials. The obtained ultraclean SWCNT‐based FETs shed light on further study of contamination‐free SWCNTs on various metal contacts and substrates.