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From Highly Purified Boron Nitride to Boron Nitride‐Based Heterostructures: An Inorganic Precursor‐Based Strategy
Author(s) -
Chen Hao,
Yang Zhenzhen,
Guo Wei,
Dunlap John R.,
Liang Jiyuan,
Sun Yifan,
Jie Kecheng,
Wang Song,
Fu Jie,
Dai Sheng
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201906284
Subject(s) - materials science , boron nitride , crystallinity , chemical engineering , nanotechnology , fabrication , graphene , heterojunction , boron , carbon fibers , nanoflower , nanostructure , organic chemistry , optoelectronics , composite material , medicine , alternative medicine , pathology , composite number , engineering , chemistry
The current approaches used to fabricate hexagonal boron nitrides (h‐BN) from boron trioxide and urea always results in contamination of the h‐BN product with carbon/oxygen. Thus, discovering a facile way of mass producing high‐purity h‐BN remains a challenge. A simple yet highly efficient thermal treatment approach to large‐scale fabrication of nanoporous h‐BN with high yield, high purity, and high crystallinity is described using NaNH 2 and NaBH 4 as the oxygen‐ and carbon‐free precursors. The unique properties of inorganic metal salts, i.e., high melting point and strong electrostatic interaction with carbon substrates, render this strategy suitable for the production of homogeneous h‐BN/mesoporous carbon and h‐BN/carbon nanotube heterostructures of high crystallinity, high h‐BN dispersity, and with a strong interfacial effect. These unique features make them promising candidates for supercapacitor applications, resulting a significantly enhanced specific capacitance. This study provides new insight into the fabrication of high‐purity h‐BN and h‐BN‐based heterostructures thus expanding their application in the field of energy storage and transformation.