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High‐Performance N‐type Mg 3 Sb 2 towards Thermoelectric Application near Room Temperature
Author(s) -
Zhang Fan,
Chen Chen,
Yao Honghao,
Bai Fengxian,
Yin Li,
Li Xiaofang,
Li Shan,
Xue Wenhua,
Wang Yumei,
Cao Feng,
Liu Xingjun,
Sui Jiehe,
Zhang Qian
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201906143
Subject(s) - materials science , thermoelectric effect , phonon scattering , electrical resistivity and conductivity , thermoelectric materials , analytical chemistry (journal) , seebeck coefficient , scattering , thermal conductivity , atmospheric temperature range , doping , carrier scattering , phonon , condensed matter physics , optoelectronics , thermodynamics , composite material , optics , electrical engineering , chemistry , physics , chromatography , engineering
Se‐doped Mg 3.2 Sb 1.5 Bi 0.5 ‐based thermoelectric materials are revisited in this study. An increased ZT value ≈ 1.4 at about 723 K is obtained in Mg 3.2 Sb 1.5 Bi 0.49 Se 0.01 with optimized carrier concentration ≈ 1.9 × 10 19 cm −3 . Based on this composition, Co and Mn are incorporated for the manipulation of the carrier scattering mechanism, which are beneficial to the dramatically enhanced electrical conductivity and power factor around room temperature range. Combined with the lowered lattice thermal conductivity due to the introduction of effective phonon scattering centers in Se&Mn‐codoped sample, a highest room temperature ZT value ≈ 0.63 and a peak ZT value ≈ 1.70 at 623 K are achieved for Mg 3.15 Mn 0.05 Sb 1.5 Bi 0.49 Se 0.01 , leading to a high average ZT ≈ 1.33 from 323 to 673 K. In particular, a remarkable average ZT ≈ 1.18 between the temperature of 323 and 523 K is achieved, suggesting the competitive substitution for the commercialized n‐type Bi 2 Te 3 ‐based thermoelectric materials.