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Recent Progress in Photonic Processing of Metal‐Oxide Transistors
Author(s) -
Yarali Emre,
Koutsiaki Christina,
Faber Hendrik,
Tetzner Kornelius,
Yengel Emre,
Patsalas Panos,
Kalfagiannis Nikolaos,
Koutsogeorgis Demosthenes C.,
Anthopoulos Thomas D.
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201906022
Subject(s) - materials science , nanotechnology , electronics , photonics , compatibility (geochemistry) , transistor , thin film transistor , oxide , engineering physics , thin film , optoelectronics , electrical engineering , metallurgy , engineering , voltage , layer (electronics) , composite material
Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional high‐temperature thermal annealing, offering rapid manufacturing times and compatibility with temperature‐sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal‐oxide thin‐film transistors (TFTs) are presented with particular emphasis on the use of various light source technologies for the photochemical and thermochemical conversion of precursor materials or postdeposition treatment of metal oxides and their application in thin‐film electronics. The pros and cons of the different technologies are discussed in light of recent developments and prospective research in the field of modern large‐area electronics is highlighted.