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Mixed‐Valence‐Driven Quasi‐1D Sn II Sn IV S 3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse
Author(s) -
Yang Huai,
Pan Longfei,
Wang Xiaoting,
Deng HuiXiong,
Zhong Mianzeng,
Zhou Ziqi,
Lou Zheng,
Shen Guozhen,
Wei Zhongming
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201904416
Subject(s) - materials science , valence (chemistry) , ternary operation , ultraviolet , polarization (electrochemistry) , optoelectronics , anisotropy , linear dichroism , molecular physics , analytical chemistry (journal) , crystallography , optics , chemistry , circular dichroism , physics , quantum mechanics , computer science , programming language , chromatography
Mixed‐valence states can bring unexpected unique phenomena, especially novel anisotropic physics, due to structural asymmetry, which originate from the discrepant distribution of atoms with different valence. This study reports an unexploited mixed‐valence‐driven quasi‐1D Sn II Sn IV S 3 crystal, which exhibits widely and distinctively anisotropic polarized‐light absorption reaching ≈3.4 from the deep ultraviolet to near‐infrared region (250–850 nm). The fabricated polarization‐sensitive photodetectors based on highly air‐stable Sn II Sn IV S 3 nanowires display strong linear dichroism among the UV–vis–NIR spectrum with responsivity exceeding ≈150 A W −1 . Furthermore, the devices are further constructed onto a flexible polyethylene terephthalate (PET) substrate and the photoresponse remains roughly unchanged after repeated bending. This work based on novel mixed‐valence‐driven quasi‐1D ternary sulfide Sn II Sn IV S 3 excites interest in low‐symmetry semiconductors for developing broadly spectral polarization‐sensitive photodetectors with environmental stability and mechanical flexibility.